Recently, several 6-inch production lines have made significant advancements, focusing on third-generation semiconductor materials like silicon carbide (SiC) and gallium oxide (Ga2O3).

• NEXIC Successfully Completes First Wafer Batch in Its Fab

On September 21, NEXIC announced that it had successfully completed the first wafer batch in its fab. NEXIC focuses on technological innovation and product development in SiC power devices and power modules, part of the third-generation semiconductors. The fab which located in Jiangyin, Jiangsu Province, China, began construction in August 2023, with equipment installation scheduled for August 2024.

Reports indicate that NEXIC’s 6-inch power semiconductor manufacturing project has a total investment of RMB 2 billion. The products can be widely used in electric vehicles, photovoltaic power generation, rail transit, and 5G communication. Once fully operational, the fab is expected to have an annual production capacity of 1 million wafers.

In June of this year, industry news revealed that NEXIC’s third-generation semiconductor power module R&D and production base project had signed an agreement to settle in Xidong New City, Wuxi, China. This project with a total investment of over RMB 1 billion, focuses on building an automotive-grade third-generation semiconductor power module packaging line, covering applications such as main drive systems, ultra-fast charging piles, photovoltaics, and industrial uses. The project is expected to begin production in 2025, with an annual output of approximately 1.29 million units and an estimated annual output value exceeding RMB 1.5 billion.

• China’s First 6-Inch Gallium Oxide Monocrystalline and Epitaxial Wafer Growth Line Breaks Ground

On September 10, Fujia Gallium commenced construction of a 6-inch gallium oxide monocrystalline and epitaxial wafer growth line in Fuyang, Hangzhou.

Founded in 2019, Fujia Gallium is committed to the commercialization of ultra-wide bandgap semiconductor gallium oxide materials, focusing on the growth of gallium oxide monocrystals and the development, production, and sale of gallium oxide substrates and epitaxial wafers. Its products are mainly used in power devices, microwave RF, and optoelectronic detection.

It is reported that Fujia Gallium is currently the only company in China capable of both 6-inch monocrystal growth and epitaxy. This project marks the construction of China’s first 6-inch gallium oxide monocrystalline and epitaxial wafer growth line.

• RIR’s 6-Inch Silicon Carbide Device Factory Completed with an Investment of INR 5.1 billion

On September 4, RIR Power Electronics Limited announced the completion of its silicon carbide semiconductor manufacturing plant in Odisha, India, with a total investment of INR 5.1 billion.

RIR is a subsidiary of the U.S.-based Silicon Power Group in India, specializing in the production of power electronic components. RIR’s product portfolio includes low to high-power devices and IGBT modules, serving industries such as energy, transportation, renewable energy, and defense.

In July 2023, Silicon Power Group announced the establishment of the SiC factory in Odisha, India, dedicated to producing 6-inch SiC wafers. The investment was made through its Indian subsidiary, RIR. In October 2023, RIR received approval from the Odisha state government to invest INR 5.108 billion in the project, which is expected to be fully operational by 2025.

In addition to RIR, Chennai-based SiCSem Private Limited announced in June its plans to establish a silicon carbide (SiC) manufacturing, assembly, testing, and packaging (ATMP) plant in Odisha, India.

On June 15, SiCSem signed a cooperation agreement with the Indian Institute of Technology Bhubaneswar (IIT-BBS) to collaborate on research in the compound semiconductor field. Their first joint project aims to localize SiC crystal growth at IIT-BBS, focusing on the mass production of 6-inch and 8-inch SiC wafers, with an estimated investment of INR 450 million (approximately RMB 38 million).